Blank Cover Image

Hot Carrier Instability Mechanism in Accumulation-Mode Normally-off SOI nMOSFETs and Their Reliability Advantage

Author(s):
Publication title:
Silicon-on-insulator technology and devices 13
Title of ser.:
ECS transactions
Ser. no.:
6(4)
Pub. Year:
2007
Page(from):
113
Page(to):
120
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775533 [1566775531]
Language:
English
Call no.:
E23400/6-4
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings New NBTI Lifetime Prediction Method for Ultra Thin SiO₂ Film

K. Watanabe, R. Kuroda, A. Teramoto, S. Sugawa, T. Ohmi

Electrochemical Society
7 Conference Proceedings High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals

Ohmi, T., Sugawa, S., Hirayama, M.

Electrochemical Society
2 Conference Proceedings Impact of Improved Mobilities and Suppressed 1/f Noise in Fully Depleted SOI MOSFETs Fabricated on Si(110) Surface

W. Cheng, A. Teramoto, C. Tye, P. Gaubert, M. Hirayama, S. Sugawa, T. Ohmi

Electrochemical Society
8 Conference Proceedings Effect of Buried Oxide on Reliability of Thin-Film SOI nMOSFETs

Kim, H-K, Lee, J-W, Lee, W-H, Oh, M-R, Koh, Y-H

Electrochemical Society
3 Conference Proceedings NBTI Mechanism Based on Hole-Injection for Accurate Lifetime Prediction

A. Teramoto, R. Kuroda, T. Ohmi

Electrochemical Society
9 Conference Proceedings High Reliability of Ultraclean Oxide Films

M. Morita, K. Nakamura, A. Teramoto, K. Makihara, T. Ohmi

Electrochemical Society
4 Conference Proceedings Performance Boost Using a New Device Structure Design for SOI MOSFETs Beyond 25nm Node

W. Cheng, A. Teramoto, T. Ohmi

Electrochemical Society
10 Conference Proceedings Hot-Carrier Degradation Behavior in Thin-Film SOT nMOSFETs With LOCOS and STI

Lee, J-W, Kim, H-K, Lee, W-H, Oh, M-R, Kob, Y-H

Electrochemical Society
5 Conference Proceedings High-Resolution X-Ray Photoelectron Spectroscopy Study on Si₃N₄/Si Interface Structures and Its Correlation with Hysteresis in C(V) Curves

M. Higuchi, A. Teramoto, M. Komura, S. Shinagawa, E. Ikenaga, H. Nohira, K. Kobayashi, T. Hattori, S. Sugawa, T. Ohmi

Electrochemical Society
11 Conference Proceedings Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFET

Okuno, E., Endo, T., Matsuki, H., Sakakibara, T., Tanaka, H.

Trans Tech Publications
6 Conference Proceedings Hot-Carrier Defect Length Propagation in LDD NMOSFETs

Raychaudhuri, A., Kwan, W.S., Deen, M.J., King, M.I.H.

Electrochemical Society
12 Conference Proceedings Hole Mobility in Si(110) p-MOS Transistors

P. Gaubert, A. Teramoto, T. Ohmi

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12