Influence of Sinking-Gate on A10.24Ga0.76As/In0.22Ga0.78As Double Heterojunction High Electron Mobility Transistors

Influence of Sinking-Gate on A10.24Ga0.76As/In0.22Ga0.78As Double Heterojunction High Electron Mobility Transistors

Author(s):

Publication title:

State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2

Title of ser.:

ECS transactions

Ser. no.:

6(2)

Pub. Year:

2007

Page(from):

259

Page(to):

266

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775519 [1566775515]

Language:

English

Call no.:

E23400/6-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047126
Series ID:	PA00000034
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Semiconductor-Solution Interface ; Meeting of the Electrochemical Society
Conf. info. (Number):	46th ; 2nd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

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