Recent Advances in Search for Suitable High-k/Metal Gate Solutions to Replace SiON/Poly-Silicon Gate Stacks in CMOS Devices for 45nm and Beyond Technologies

Recent Advances in Search for Suitable High-k/Metal Gate Solutions to Replace SiON/Poly-Silicon Gate Stacks in CMOS Devices for 45nm and Beyond Technologies

Author(s):

B. Linder

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

Title of ser.:

ECS transactions

Ser. no.:

6(1)

Pub. Year:

2007

Page(from):

287

Page(to):

294

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

Language:

English

Call no.:

E23400/6-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047125
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

Similar Items:

1 Conference Proceedings Charge Defects, Vt Shifts, and the Solution to the High-K Metal Gate n-MOSFET Problem S. Guha, V. Narayanan, V. Paruchuri, B. Linder, M. Copel, N. Bojarczuk, Y. Kim, M. Chudzik, Y. Wang, P. Ronsheim Electrochemical Society	7 Conference Proceedings Characterization of Bulk and Interface Properties of Dielectric Layers and Stacks Okorn-Schmidt, H.F., Gusev, E.P., Buchanan, D.A., Cartier, E., Guha, S., Bojarczuk, N.A., Rath, D.L., Callegari, A., … Electrochemical Society
2 Conference Proceedings Molecular Beam Deposition of Alternate Gate Dielectrics for Si CMOS Bojarczuk, N.A., Guha, S., Narayanan, V., Ragnarsson, L.A. Electrochemical Society	8 Conference Proceedings 14 On Location and Magnitude of Trapped Charge in Poly-Si ALD-Al2O3 Capped Hf-Silicate Gate Stacks Maitra, K., Under, B.P., Gusev, E.P., Narayanan, V., Frank, M.M., Cartier, E.A. Electrochemical Society
3 Conference Proceedings Materials Interaction at the Nanoscale in High-k Metal Gate Stacks: The Role of Oxygen S. Guha, E. Preisler, N. Bojarczuk, M. Copel Electrochemical Society	9 Conference Proceedings Dielectric Breakdown Characteristics of poly-Si/HfAlOx/SiON Gate Stack Torii, Kazuyoshi, Ohji, Hiroshi, Mutoh, Akiyoshi, Kawahara, Takaaki, Mitsuhashi, Riichiro, Horiuchi, Atsushi, Miyazaki, … Materials Research Society
4 Conference Proceedings Gallium-nitride-based LEDs on silicon substrates Bojarczuk,N.A., Guha,S. SPIE - The International Society for Optical Engineering	10 Conference Proceedings Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices B. H. Lee, P. Kirsch, P. Majhi, S. Song, R. Chol, N. Moumen, G. Bersuker Electrochemical Society
5 Conference Proceedings Electrical Characteristics of Metal-(La0.27Y0.73)2O3-Silicon Capacitors Preisler, E. J., Bojarczuk, N. A., Guha, S. Materials Research Society	11 Conference Proceedings Materials and Process Integration Issues in Metal Gate/High-κ Stacks and Their Dependence on Device Performance A. Callegari, K. Babich, S. Zafar, V. Narayanan, T. Ando Electrochemical Society
6 Conference Proceedings Epitaxial Si Films Grown on Lattice Matched (LaxY1-x)O3/Si (111) Structures by Molecular Beam Epitaxy Narayanan, V., Guha, S., Bojarczuk, N. A., Copel, M. Materials Research Society	12 Conference Proceedings Recent advances in active constrained layer damping treatment Narayanan, S. SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12