Full Range Work Function Tuning of MOSFETs using Interfacial Yttrium Layer in fully Germanided Ni Gate

Full Range Work Function Tuning of MOSFETs using Interfacial Yttrium Layer in fully Germanided Ni Gate

Author(s):

H. Yu

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

Title of ser.:

ECS transactions

Ser. no.:

6(1)

Pub. Year:

2007

Page(from):

271

Page(to):

278

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

Language:

English

Call no.:

E23400/6-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047125
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

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