Study of the Impact of Electron Traps on GaN HEMT Reliability

Study of the Impact of Electron Traps on GaN HEMT Reliability

Author(s):

D. Katzer

Publication title:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

Title of ser.:

ECS transactions

Ser. no.:

3(5)

Pub. Year:

2006

Page(from):

151

Page(to):

160

Pages:

10

Pub. info.:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

Language:

English

Call no.:

E23400/3-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00047113
Series ID:	PA00000034
Conf. info. (Name):	Meeting of the Electrochemical Society
Conf. info. (Number):	210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03

Similar Items:

1 Conference Proceedings Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-Heating Effects in AlGaN/GaN HEMT Structures J. Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert Electrochemical Society	7 Conference Proceedings Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method D. Cheney, R. Deist, B. Gila, F. Ren, P. Whiting, J. Navales, E. Douglas, S. Pearton Materials Research Society
2 Conference Proceedings Photoionization spectra of traps responsible for current collapse in GaN MESFETs Klein, P. B., Freitas, J. A. Jr., Binari, S. C. MRS-Materials Research Society	8 Conference Proceedings Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs Hobart, K.D., Kub, F.J., Esser, R., Jernigan, G.G., Fatemi, M., Binari, S.C., Katzer, D.S., Dietrich, H.B., Kipshidze, … Electrochemical Society
3 Conference Proceedings Secondary Electron Emission Studies of Diamond and GaN Materials Katzer, D. S., Shin, A., Yater, J. E. Materials Research Society	9 Conference Proceedings Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society
4 Conference Proceedings Measurement of Local Temperatures Using (micro)-Raman of SiC and AlGaN-GaN/SiC Power and RF Devices O.J. Glembocki, J.D. Caldwell, J.A. Mittereder, J.P. Calame, S.C. Binari Trans Tech Publications	10 Conference Proceedings Electron Irradiation-Induced Trap in n-Type GaN Fang, Z-Q., Hemsky, J. W., Look, D. C., Mack, M. P., Molnar, R. J., Via, G. D. MRS - Materials Research Society
5 Conference Proceedings Status of GaN HEMT performance and reliability D. S. Green, J. D. Brown, R. Vetury, S. Lee, S. R. Gibb Society of Photo-optical Instrumentation Engineers	11 Conference Proceedings Correlation of drain current pulsed response with microwave power output in AlGaN/GaN HEMTs Binari, S. C., Ikossi-Anastasiou, K., Kruppa, W., Dietrich, H. B., Kelner, G., Henry, R. L., Koleske, D. D., Wickenden, … MRS-Materials Research Society
6 Conference Proceedings AIGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100mm Si/Poly Sic Composite Substrates Roberts, J.C., Rajagopal, P., Cook, J.W.Jr., Therrien, R.J., Piner, E.L., Linthicum, K.J., Hobart, K.D., Twigg, M., … Electrochemical Society	12 Conference Proceedings Low-Power, High Speed Sb-based HEMTs and HBTs Mango, R., Boos, J. B., Campbell, P. M., Bennet, B. R., Glasser, E. R., Tinkham, B. P., Ancona, M. G., Hobart, K. D., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12