Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes | 東京工業大学附属図書館文献データベース

Blank Cover Image

Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics 4

Title of ser.:

ECS transactions

Ser. no.:

3(3)

Pub. Year:

2006

Page(from):

159

Page(to):

170

Pages:

12

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

Language:

English

Call no.:

E23400/3-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00047111
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.30-2006.11.03

Similar Items:

1 Conference Proceedings 13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets De Gendt, S., Brunco, D., Caymax, M., Canard, T., Date, L., Delabie, A., Deweerd, W., Groeseneken, G., Houssa, M., Hyun, … Electrochemical Society	7 Conference Proceedings Effective Workfunction Modulation by As Implantation in Metal Gate Stacks R. Singanamalla, H. Yu, T. Janssens, T. Witters, T. Schram, S. Kubicek, S. DeGendt, M. Jurczak, K. De Meyer Electrochemical Society
2 Conference Proceedings Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide A. Debbie, M. Caymax, S. Brijs, D. Brunco, T. Conard, E. Sleeckx, L. Ragnarsson, S. Van Elshocht, S. De Gendt, M. Heyns Electrochemical Society	8 Conference Proceedings Compatibility of Polysilicon with HfO2-based Gate Dielectrics for CMOS Applications Kaushik, V., De Gendt, S., Caymax, M., Young, E., Rohr, E., Van Elshocht, S., Delabie, A., Claes, M., Shi, X., Chen, I., … Electrochemical Society
3 Conference Proceedings Physical Characterization of the Metal/High-κ Layer Interaction upon Annealing T. Conard, A. Franquet, W. Vandervorst, M. Reading, J. Van den Berg Electrochemical Society	9 Conference Proceedings 29 Influence of Activation Annealing and Silicidation Process on as Redistribution and Pile-up at the NixSiy/SiO2 Interface Pawlak, M., Kittl, J. A., Janssens, T., Lauwers, A., Vandervorst, W., Anil, K. G., Schram, T., Veloso, A., van Dal, M.J. … Electrochemical Society
4 Conference Proceedings High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society	10 Conference Proceedings New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces K. Shiraishi, T. Nakayatna, Y. Akasaka, S. Miyazaki, T. Nakaoka, K. Ohmori, P. Abmet, K. Torii, H. Watanabe, T. Chikyow, … Electrochemical Society
5 Conference Proceedings On the Nature of Weak Spots in High-k Layers Submitted to Anneals Petry, J., Vandervorst, W., Richard, O., Conard, T., DeWolf, P., Kaushik, V., Delabie, A., Elshocht, S.Van Materials Research Society	11 Conference Proceedings Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society
6 Conference Proceedings Physcial Characterization of Ultrathin High-k Dielectrics Vandervorst, W., Brijs, B., Bender, H., Conard, O.T., Petry, J., Richard, O., Elshocht, S.Van, Delabie, A., Caymax, M., … Materials Research Society	12 Conference Proceedings ALD HfO2 Surface Preparation Study Delabie, Annelies, Caymax, M., Maes, J.W., Bajolet, P., Brijs, B., Cartier, E., Conard, T., Gendt, S.De, Richard, O., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12