Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators

Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators

Author(s):

H. Ota

Publication title:

Physics and technology of high-k gate dielectrics 4

Title of ser.:

ECS transactions

Ser. no.:

3(3)

Pub. Year:

2006

Page(from):

41

Page(to):

48

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

Language:

English

Call no.:

E23400/3-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00047111
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.30-2006.11.03

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