Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Bafflers on N-Type Germanium Substrates

Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Bafflers on N-Type Germanium Substrates

Author(s):

E. R. Simoen

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

Title of ser.:

ECS transactions

Ser. no.:

3(2)

Pub. Year:

2006

Page(from):

391

Page(to):

402

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

Language:

English

Call no.:

E23400/3-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047110
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.30-2006.11.02

Similar Items:

1 Conference Proceedings A BEEM Study of PtSi Schottky Contacts on Ion-Milled Si Ru, G-P., Detavernier, C., Donaton, R. A., Blondeel, A., Clauws, P., Meirhaeghe, R. L. Van, Cardon, F., Maex, K., Qu, … MRS - Materials Research Society	7 Conference Proceedings Hydrogen-plasma-enhanced thermal donor formation in n-type high-resistivity MCZ silicon Simoen, E., Huang, Y. L., Claeys, C., Raft, J. M., Job, R., Fahrner, W. R., Versluys, J., Clauws, P. Electrochemical Society
2 Conference Proceedings A Study On (CO1-xNIxSI2) Schottky Contacts On N-SI(100) Substrates Qu, Xin-Ping, Detavernier, C., Van Meirhaeghe, R.L., Cardon, F., Lauwers, A., Maex, K., Li, Bing-Zong Electrochemical Society	8 Conference Proceedings P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon Huang, Y.L., Simoen, E., Job, R., Claeys, C., Dungen, W., Ma, Y., Fahrner, W.R., Versluys, J., Clauws, P. Materials Research Society
3 Conference Proceedings Silicide Formation for Ni and Pd Bilayers on Si(100) Substrates Qu, Xin-Ping, Detavernier, C., Meirhaeghe, R.L. Van, Cardon, F. Materials Research Society	9 Conference Proceedings Defect Engineering Considerations for Strained Silicon Substrates C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen Electrochemical Society
4 Conference Proceedings SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS Trauwaert, M.-A., Vanhellemont, J., Simoen, E., Claeys, C., Johlander, B., Harboe-Sorensen, R., Adams, L., Clauws, P. Materials Research Society	10 Conference Proceedings The Influence of Ti Capping Layers on CoSi2 Formation in the Presence of Interfacial Oxide Detavernier, C., Donaton, R. A., Maex, K., Jin, S., Bender, H., Meirhaeghe, R. Van, Cardon, F. MRS - Materials Research Society
5 Conference Proceedings CoSi2 Formation Using a Ti Capping Layer - The Influence of Processing Conditions on CoSi2 Nucleation Detavernier, C., Meirhaeghe, R.L. Van, Maex, K. Materials Research Society	11 Conference Proceedings THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON Simoen, E., Claeys, C., Job, R., Ulyashin, A.G., Fahrner, W.R., Tonelli, G., Degryse, O., Clauws, P. Electrochemical Society
6 Conference Proceedings The Influence of Ti and TiN on the Thermal Stability of CoSi2 Detavernier, C., Ru, Guo-Ping, Meirhaeghe, R.L. Van, Maex, K. Materials Research Society	12 Conference Proceedings THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON Simoen, E., Claeys, C., Job, R., Ulyashin, A.G., Fahrner, W.R., Tonelli, G., Degryse, O., Clauws, P. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12