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Leakage Current Characteristics of Ultra-Shallow Junctions Formed by B₂H₆ Plasma Doping

Author(s):
H. Sauddin
Y. Sasaki
H. Ito
B. Mizuno
P. Ahmet
K. Kakushima
N. Sugii
K. Tsutsui
H. Iwai
4 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
Title of ser.:
ECS transactions
Ser. no.:
3(2)
Pub. Year:
2006
Page(from):
57
Page(to):
66
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775021 [1566775027]
Language:
English
Call no.:
E23400/3-2
Type:
Conference Proceedings

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