Blank Cover Image

Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures

Author(s):
Publication title:
Microelectronics Technology and Devices : SBMICRO 2007
Title of ser.:
ECS transactions
Ser. no.:
9(1)
Pub. Year:
2007
Page(from):
397
Page(to):
404
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775656 [1566775655]
Language:
English
Call no.:
E23400/9-1
Type:
Conference Proceedings

Similar Items:

M. Bellodi, L.M. Almeida

Electrochemical Society

Bellodi, Marcello, Martino, Joao Antonio

Electrochemical Society

Bellodi, M., Martino, J.A.

Electrochemical Society

Bellodi, M, Martino, J A

Electrochemical Society

Salvador Pinillos Gimenez, Rodrigo Mazzutti, Gomes Ferreira, João Antonio Martino

Electrochemical Society

Bellodi, M., Martino, J.A.

Electrochemical Society

Bellodi, M., Iniguez, B., Flandre, D., Martino, J.A.

Electrochemical Society

Bellodi, M., Martino, J.A.

Electrochemical Society

Kubicek, S., Jansen, P., Badenes, G., Schaekers, M., Koldyaev, V., Deferm, L., De Meyer, K., Kerr, D., Naem, A.

Electrochemical Society

Bellodi, M., Martino, J. A.

Electrochemical Society

Lee, T.-K., Wang, Y.-C., Chi, M., Lu, C.Y., Hsieh, C.H., Liu, R.G., Liao, H.J., Yang, S.S., Chang, C.-H.

SPIE-The International Society for Optical Engineering

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12