Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics | 東京工業大学附属図書館文献データベース

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Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics

Author(s):

Publication title:

Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing

Title of ser.:

ECS transactions

Ser. no.:

2(1)

Pub. Year:

2006

Page(from):

63

Page(to):

78

Pages:

16

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774383 [1566774381]

Language:

English

Call no.:

E23400/2-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047106
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Dielectrics for Nanosystems ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 209th
Conf. info. (Venue):	Denver, Colorado. USA
Conf. info. (Date):	2004.05.07-2004.05.12

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