High-k Materials for Tunnel Barrier Engineering in Floating-Gate Flash Memories | 東京工業大学附属図書館文献データベース

Blank Cover Image

High-k Materials for Tunnel Barrier Engineering in Floating-Gate Flash Memories

Author(s):

Publication title:

Physics and technology of high-k gate dielectrics III

Title of ser.:

ECS transactions

Ser. no.:

1(5)

Pub. Year:

2006

Page(from):

75

Page(to):

90

Pages:

16

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

Language:

English

Call no.:

E23400/1-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00047099
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21

Similar Items:

1 Conference Proceedings High-K Materials for Tunnel Barrier Engineering in Future Memory Technologies Blomme, P., Govoreanu, B., Rosmeulen, M., Akheyar, A., Haspeslagh, L., De Vos, J., Lorenzini, M., Van Houdt, J., De … Electrochemical Society	7 Conference Proceedings New Nanocrystalline Si Floating Gate Structure for Nonvolatile Memory Application Wu, L.C., Shi, J.J., Chen, K.J., Xu, J., Li, W., Ma, Z.Y., Dai, M., Wu, D., Li, A.D., Huang, X.F. Materials Research Society
2 Conference Proceedings Lateral Distribution of Electrons Trapped in Nitride Layers Lorenzini, M., Rosmeulen, M., Breuil, L., Haspeslagh, L., Van-Houdt, J., De-Meyer, K. Materials Research Society	8 Conference Proceedings Effect of Top Dielectric Morphology and Gate Material on the Performance of Nitride-based FLASH Memory Cells Antonio Cacciato, Laurent Breuil, Geert Van den bosch, Olivier Richard, Aude Rothschild, Arnaud Furnémont, Hugo Bender, … Materials Research Society
3 Conference Proceedings High-k Dielectrics for Hybrid Floating Gate Memory Applications J.G. Lisoni, L. Breuil, P. Blomme, J. Van Houdt Materials Research Society	9 Conference Proceedings Alternative Gate Dielectric Materials S. Van Elshocht, A. Hardy, S. De Gendt, C. Adelmann, P. K. Baumann, D. P. Brunco, M. R. Caymax, F. Conard, P. Delugas, … Electrochemical Society
4 Conference Proceedings Integration of HMOSTM Flash Memory in a 90 nm CMOS Technology De Vos, J., Haspeslagh, L., Demand, M., Redolfi, A., Baerts, C., Beckx, S., Vleugels, F., Van Houdt, J. Electrochemical Society	10 Conference Proceedings CVD Growth of Si Nanocrystals on Dielectricc Surfaces for Nanocrystal Floating Gate Memory Application Madhukar, Sucharita, Smith, K., Muralidhar, R., O'Meara, D., Sadd, M., Nguyen, B-Y., White, B., Jones, B. Materials Research Society
5 Conference Proceedings Impact of the High-Temperature Process Steps on the HfAlO Interpoly Dielectric Stacks for Nonvolatile Memory Applications Daniel Ruiz Aguado, Bogdan Govoreanu, Paola Favia, Kristin De Meyer, Jan Van Houdt Materials Research Society	11 Conference Proceedings 50 Characterization of the Effect of High-k Process Conditions on the Performance of Flash Memory by a DOE Method Jean, J., Shiraiwa, H., Orimoto, T., Zheng, W., Suh, Y., Ding, M., Chan, S., Sachar, H., Torii, S., Xue, L., Randolph, … Electrochemical Society
6 Conference Proceedings Ge nanocrystals embedded in Hf-aluminate high-k gate dielectric for floating gate memory application Lee, P. F., Liu, W. L., Song, Z. T., Dai, J. Y. SPIE - The International Society of Optical Engineering	12 Conference Proceedings A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric Vanheusden, K., Warren, W. L., Fleetwood, D. M., Devine, R. A. B., Draper, B. L., Schwank, J. R., Shaneyfelt, M. R., … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12