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Gate Dielectrics for Advanced Semiconductor Devices: Thermally-Grown SiO₂ is a Very Difficult Act to Follow

Author(s):
G. Lucovsky  
Publication title:
Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
Title of ser.:
ECS transactions
Ser. no.:
1(1)
Pub. Year:
2005
Page(from):
3
Page(to):
28
Pages:
26
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774307 [1566774306]
Language:
English
Call no.:
E23400/1-1
Type:
Conference Proceedings

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