Drain Bias Dependent Threshold Voltage Shift of a-Si:H TFT Due to the Pulsed Stress

Drain Bias Dependent Threshold Voltage Shift of a-Si:H TFT Due to the Pulsed Stress

Author(s):

Publication title:

Amorphous and polycrystalline thin-film silicon science and technology--2007 : symposium held April 9-13, 2007, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

989

Pub. Year:

2007

Page(from):

321

Page(to):

326

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999497 [1558999493]

Language:

English

Call no.:

M23500/989

Type:

Conference Proceedings

Details

TDL ID:	ZA00048532
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting
Conf. info. (Number):	2007
Conf. info. (Venue):	San Francisco, California
Conf. info. (Date):	2007.04.09-2007.04.13

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