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Threshold residual ion concentration on photomask surface to prevent haze defects

Author(s):
J. -M. Kim ( PKL-Photronics R&D Ctr. (South Korea) )
J. -C. Lee ( PKL-Photronics R&D Ctr. (South Korea) )
D. -S. Kang ( PKL-Photronics R&D Ctr. (South Korea) )
D. -H. Lee ( PKL-Photronics R&D Ctr. (South Korea) )
C. Shin ( PKL-Photronics R&D Ctr. (South Korea) )
M. -H. Choi ( PKL-Photronics R&D Ctr. (South Korea) )
S. -S. Choi ( PKL-Photronics R&D Ctr. (South Korea) )
2 more
Publication title:
Photomask and next-generation lithography mask technology XIV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6607
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819467454 [0819467456]
Language:
English
Call no.:
P63600/6607
Type:
Conference Proceedings

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