Study of mask structure for 45-nm node based on manufacturability and lithographic performance

Study of mask structure for 45-nm node based on manufacturability and lithographic performance

Author(s):

J. G. Doh ( Samsung Electronics Co., Ltd. (South Korea) )

C. H. Park ( Samsung Electronics Co., Ltd. (South Korea) )

Y. S. Moon ( Samsung Electronics Co., Ltd. (South Korea) )

B. H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )

S. W. Kwon ( Samsung Electronics Co., Ltd. (South Korea) )

S. Y. Choi ( Samsung Electronics Co., Ltd. (South Korea) )

S. H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )

S. Y. Kim ( Samsung Electronics Co., Ltd. (South Korea) )

B. G. Kim ( Samsung Electronics Co., Ltd. (South Korea) )

S. G. Woo ( Samsung Electronics Co., Ltd. (South Korea) )

H. K. Cho ( Samsung Electronics Co., Ltd. (South Korea) )

6 more

Publication title:

Photomask and next-generation lithography mask technology XIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6607

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819467454 [0819467456]

Language:

English

Call no.:

P63600/6607

Type:

Conference Proceedings

Details

TDL ID:	ZA00046914
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next-Generation Lithography Mask Technology
Conf. info. (Number):	2007 : 14th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2007.04.17-2007.04.19

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