Progress on EUV mask fabrication for 32-nm technology node and beyond

Progress on EUV mask fabrication for 32-nm technology node and beyond

Author(s):

G. Zhang ( Intel Corp. (USA) )

P. -Y. Yan ( Intel Corp. (USA) )

T. Liang ( Intel Corp. (USA) )

S. Park ( Intel Corp. (USA) )

P. Sanchez ( Intel Corp. (USA) )

E. Y. Shu ( Intel Corp. (USA) )

E. A. Ultanir ( Intel Corp. (USA) )

S. Henrichs ( Intel Corp. (USA) )

A. Stivers ( Intel Corp. (USA) )

G. Vandentop ( Intel Corp. (USA) )

B. Lieberman ( Intel Corp. (USA) )

P. Qu ( Intel Corp. (USA) )

7 more

Publication title:

Photomask and next-generation lithography mask technology XIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6607

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819467454 [0819467456]

Language:

English

Call no.:

P63600/6607

Type:

Conference Proceedings

Details

TDL ID:	ZA00046914
Series ID:	PA00000029
Conf. info. (Name):	Photomask and Next-Generation Lithography Mask Technology
Conf. info. (Number):	2007 : 14th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2007.04.17-2007.04.19

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