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Low-frequency noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors: impact of carbon concentration

Author(s):
  • J. Raoult ( IES, CNRS-Univ. Montpellier (France) )
  • C. Delseny ( IES, CNRS-Univ. Montpellier (France) )
  • F. Pascal ( IES, CNRS-Univ. Montpellier (France) )
  • M. Marin ( STMicroelectronics (France) )
  • M. J. Deen ( McMaster Univ. (Canada) )
Publication title:
Noise and fluctuations in circuits, devices, and materials : 21-24 May 2007, Florence, Italy
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6600
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819467379 [0819467375]
Language:
English
Call no.:
P63600/6600
Type:
Conference Proceedings

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