On the mechanisms of low-frequency noise in vertical silicon pnp BJTs

On the mechanisms of low-frequency noise in vertical silicon pnp BJTs

Author(s):

P. Cheng ( Georgia Institute of Technology (USA) )
E. Zhao ( Georgia Institute of Technology (USA) )
J. D. Cressler ( Georgia Institute of Technology (USA) )
J. Prasad ( Maxim Semiconductor (USA) )

Publication title:

Noise and fluctuations in circuits, devices, and materials : 21-24 May 2007, Florence, Italy

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6600

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819467379 [0819467375]

Language:

English

Call no.:

P63600/6600

Type:

Conference Proceedings

Details

TDL ID:	ZA00046907
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise and Fluctuations in Circuits, Devices, and Materials
Conf. info. (Number):	2007
Conf. info. (Venue):	Florence, Italy
Conf. info. (Date):	2007.05.21-2007.05.24

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