Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures

Type-II InAs/GaSb strain layer superlattice detectors for higher operating temperatures

Author(s):

J. B. Rodriguez ( Univ. of New Mexico, Center for High Technology Materials (USA) )

E. Plis ( Univ. of New Mexico, Center for High Technology Materials (USA) )

S. J. Lee ( Univ. of New Mexico, Center for High Technology Materials (USA) )

H. Kim ( Univ. of New Mexico, Center for High Technology Materials (USA) )

G. Bishop ( Univ. of New Mexico, Center for High Technology Materials (USA) )

Y. D. Sharma ( Univ. of New Mexico, Center for High Technology Materials (USA) )

L. R. Dawson ( Univ. of New Mexico, Center for High Technology Materials (USA) )

S. Krishna ( Univ. of New Mexico, Center for High Technology Materials (USA) )

C. Jones ( Santa Barbara Focal Plane (USA) )

4 more

Publication title:

Infrared technology and applications XXXIII : 9-13 April 2007, Orlando, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6542

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466648 [0819466646]

Language:

English

Call no.:

P63600/6542

Type:

Conference Proceedings

Details

TDL ID:	ZA00046849
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Infrared Technology and Applications
Conf. info. (Number):	2007 : 33rd
Conf. info. (Venue):	Orlando, Florida, USA
Conf. info. (Date):	2007.04.09-2007.04.13

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