Effect of deprotection activation energy on lithographic performance of EUVL resist

Effect of deprotection activation energy on lithographic performance of EUVL resist

Author(s):

S. Kim ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

G. Yu ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

J. Lee ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

H. Kim ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

D. Kim ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

Y. Kang ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

J. Kim ( Dongjin Semichem Co., Ltd (South Korea) and Samsung Electronics Co., Ltd (South Korea) )

2 more

Publication title:

Advances in resist materials and processing technology XXIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6519

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466389 [0819466387]

Language:

English

Call no.:

P63600/6519

Type:

Conference Proceedings

Details

TDL ID:	ZA00046826
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Materials and Processing Technology
Conf. info. (Number):	2007 : 24th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.26-2007.02.28

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