Sub 10-nm contact holes with aspect ratio over sixty formed by e-beam resist shrinkage techniques

Sub 10-nm contact holes with aspect ratio over sixty formed by e-beam resist shrinkage techniques

Author(s):

W. Chen ( Industrial Technology Research Institute (Taiwan) )
M. Kao ( Industrial Technology Research Institute (Taiwan) )
M. Tsai ( Industrial Technology Research Institute (Taiwan) )

Publication title:

Advances in resist materials and processing technology XXIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6519

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466389 [0819466387]

Language:

English

Call no.:

P63600/6519

Type:

Conference Proceedings

Details

TDL ID:	ZA00046826
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Materials and Processing Technology
Conf. info. (Number):	2007 : 24th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.26-2007.02.28

Similar Items:

1 Conference Proceedings Gap-fill type HSQ/ZEP520A bilayer resist process-(I): HSQ-coated ZEP520A CD shrinkage for 32-nm trench patterns W.-S. Chen, M.-J. Kao, M.-J. Tsai Society of Photo-optical Instrumentation Engineers	7 Conference Proceedings Contact shrinkage techniques for 157-nm lithography Yamana, M., Hirano, M., Nagahara, S., Tominaga, M. SPIE - The International Society of Optical Engineering
2 Conference Proceedings ArF resist for contact hole application Chen,K.-J.R., Lawaon,M.C., Hughes,T., Brunsvld,W.R., Varanasi,P.R., Keller,R., Jordhamo,G.M. SPIE-The International Society for Optical Engineering	8 Conference Proceedings 193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process Ferri, J.E., Vieira, M., Reybrouck, M., Mastovich, M.E., Bowdoin, S., Brandom, R., Knutrud, P.C. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes Matsui, M., Nozoe, M., Arauchi, K., Takafuji, A., Nishiyama, H., Goto, Y. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Strategy for sub-80-nm contact hole patterning considering device fabrication Yoon, J.-Y., Hata, M., Hah, J.-H., Kim, H.-W., Woo, S.-G., Cho, H.-K., Han, W.-S. SPIE - The International Society of Optical Engineering
4 Conference Proceedings CPL mask technology for sub-100-nm contact hole imaging Kasprowicz, B.S., Conley, W.E., Litt, L.C., Van Den Broeke, D.J., Montgomery, P.K., Socha, R.J., Wu, W., Lucas, K.D., … SPIE - The International Society of Optical Engineering	10 Conference Proceedings Gap-fill type HSQ/ZEP520A bilayer resist process-(II): HSQ island and spacer formation W.-S. Chen, P.-Y. Gu, M.-J. Kao, M.-J. Tsai Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Sub-10-nm structures written in ultra-thin HSQ resist layers using electron-beam lithography A. E. Grigorescu, M. C. van der Krogt, C. W. Hagen SPIE - The International Society of Optical Engineering	11 Conference Proceedings Sub-10 nm Electron Beam Lithography: -AlF-Doped Lithium Fluoride as a Resist Langheinrich W., Beneking H. Kluwer Academic Publishers
6 Conference Proceedings Highly Selective Etch of SiO2 for High Aspect Ratio Sub-0.5 um Holes Zhu, H., Mueller, G., Nguyen, T., Tsai, W. Electrochemical Society	12 Conference Proceedings High-performance 193-nm photoresist materials based on ROMA polymers: sub-90-nm contact hole application with resist reflow Joo, H.S., Seo, D.C., Kim, C.M., Lim, Y.T., Cho, S.D., Lee, J.B., Song, J.Y., Kim, K.M., Park, J.H., Jung, J.C., Shin, … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12