Effect of photo-acid generator concentration and developer strength on the patterning capabilities of a model EUV photoresist

Author(s):

K. Choi ( Intel Corp. (USA) )

V. M. Prabhu ( National Institute of Standards and Technology (USA) )

K. A. Lavery ( National Institute of Standards and Technology (USA) )

E. K. Lin ( National Institute of Standards and Technology (USA) )

W. Wu ( National Institute of Standards and Technology (USA) )

J. T. Woodward ( National Institute of Standards and Technology (USA) )

M. J. Leeson ( Intel Corp. (USA) )

H. B. Cao ( Intel Corp. (USA) )

M. Chandhok ( Intel Corp. (USA) )

G. Thompson ( Intel Corp. (USA) )

5 more

Publication title:

Advances in resist materials and processing technology XXIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6519

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466389 [0819466387]

Language:

English

Call no.:

P63600/6519

Type:

Conference Proceedings