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Simulation of the combined effects of polymer size, acid diffusion length, and EUV secondary electron blur on resist line-edge roughness

Author(s):
D. Drygiannakis ( Institute of Microelectronics (Greece) )
M. D. Nijkerk ( TNO (Netherlands) )
G. P. Patsis ( Institute of Microelectronics (Greece) )
G. Kokkoris ( Institute of Microelectronics (Greece) )
I. Raptis ( Institute of Microelectronics (Greece) )
L. H. A. Leunissen ( IMEC (Belgium) )
E. Gogolides ( Institute of Microelectronics (Greece) )
2 more
Publication title:
Advances in resist materials and processing technology XXIV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6519
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819466389 [0819466387]
Language:
English
Call no.:
P63600/6519
Type:
Conference Proceedings

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