Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)

Study of ADI (After Develop Inspection) on photo resist wafers using electron beam (II)

Author(s):

T. Hayashi ( Tokyo Electron, Ltd. (Japan) )

M. Saito ( Tokyo Electron, Ltd. (Japan) )

K. Fujihara ( Tokyo Electron, Ltd. (Japan) )

S. Shibuya ( Tokyo Electron, Ltd. (Japan) )

Y. Kudou ( Tokyo Electron, Ltd. (Japan) )

H. Nagaike ( Tokyo Electron AT, Ltd. (Japan) )

J. Lin ( Hermes Microvision, Inc. (USA) )

J. Jau ( Hermes Microvision, Inc. (USA) )

3 more

Publication title:

Metrology, inspection, and process control for microlithography XXI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6518

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466372 [0819466379]

Language:

English

Call no.:

P63600/6518

Type:

Conference Proceedings

Details

TDL ID:	ZA00046825
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2007 : 21st
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.26-2007.03.01

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