The effect of localized mask density variations on image quality in EUV lithography

The effect of localized mask density variations on image quality in EUV lithography

Author(s):

J. Park ( Samsung Electronics Co., Ltd. (South Korea) )
H. Seo ( Samsung Electronics Co., Ltd. (South Korea) )
S. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
H. Cho ( Samsung Electronics Co., Ltd. (South Korea) )
J. Moon ( Samsung Electronics Co., Ltd. (South Korea) )

Publication title:

Emerging lithographic technologies XI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6517

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466365 [0819466360]

Language:

English

Call no.:

P63600/6517

Type:

Conference Proceedings

Details

TDL ID:	ZA00046824
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging Lithographic Technologies
Conf. info. (Number):	2007 : 11th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.27-2007.03.01

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