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Properties of EUVL masks as a function of capping layer and absorber stack structures

Author(s):
H. Seo ( Samsung Electronics Co., Ltd. (South Korea) )
J. Park ( Samsung Electronics Co., Ltd. (South Korea) )
S. Lee ( Samsung Electronics Co., Ltd. (South Korea) )
H. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
S. Kim ( Samsung Electronics Co., Ltd. (South Korea) )
H. Cho ( Samsung Electronics Co., Ltd. (South Korea) )
1 more
Publication title:
Emerging lithographic technologies XI
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6517
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819466365 [0819466360]
Language:
English
Call no.:
P63600/6517
Type:
Conference Proceedings

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