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Leakage characteristics for the buried photodiode structure on vertical CMOS image sensors

Author(s):
S. Lee ( Dongbu Electronics Co. (South Korea) )
S. Lim ( Dongbu Electronics Co. (South Korea) )
C. Lee ( Dongbu Electronics Co. (South Korea) )
J. Park ( Dongbu Electronics Co. (South Korea) )
S. Bang ( Dongbu Electronics Co. (South Korea) )
S. Kang ( Dongbu Electronics Co. (South Korea) )
R. A. Martin ( Foveon, Inc. (USA) )
S. Bae ( Foveon, Inc. (USA) )
J. W. Park ( Dongbu Electronics Co. (South Korea) )
4 more
Publication title:
Digital photography III : 29-30 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6502
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819466150 [0819466158]
Language:
English
Call no.:
P63600/6502
Type:
Conference Proceedings

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