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Measurement of the internal quantum efficiency of InGaN quantum wells

Author(s):
A. Laubsch ( Osram Opto Semiconductors (Germany) )
M. Sabathil ( Osram Opto Semiconductors (Germany) )
G. Bruederl ( Osram Opto Semiconductors (Germany) )
J. Wagner ( Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany) )
M. Strassburg ( Osram Opto Semiconductors (Germany) )
E. Baur ( Osram Opto Semiconductors (Germany) )
H. Braun ( Univ. of Regensburg (Germany) )
U. T. Schwarz ( Univ. of Regensburg (Germany) )
A. Lell ( Osram Opto Semiconductors GmbH (Germany) )
S. Lutgen ( Osram Opto Semiconductors GmbH (Germany) )
N. Linder ( Osram Opto Semiconductors GmbH (Germany) )
R. Oberschmid ( Osram Opto Semiconductors GmbH (Germany) )
B. Hahn ( Osram Opto Semiconductors GmbH (Germany) )
8 more
Publication title:
Light-emitting diodes : research, manufacturing, and applications XI : 24-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6486
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465993 [0819465992]
Language:
English
Call no.:
P63600/6486
Type:
Conference Proceedings

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