Comprehensive study of reliability of InGaN-based laser diodes

Author(s):

L. Marona ( High Pressure Research Ctr., Unipress (Poland) )

M. Sarzynski ( High Pressure Research Ctr., Unipress (Poland) )

P. Wi?niewski ( High Pressure Research Ctr., Unipress (Poland) )

M. Leszczy?ski ( High Pressure Research Ctr., Unipress (Poland) and TopGaN, Ltd. (Poland) )

P. Prystawko ( High Pressure Research Ctr., Unipress (Poland) )

I. Grzegory ( High Pressure Research Ctr., Unipress (Poland) and TopGaN, Ltd. (Poland) )

T. Suski ( High Pressure Research Ctr., Unipress (Poland) )

S. Porowski ( High Pressure Research Ctr., Unipress (Poland) )

R. Czernecki ( TopGaN, Ltd. (Poland) )

G. Kamler ( High Pressure Research Ctr., Unipress (Poland) )

A. Czerwinski ( Institute of Electron Technology (Poland) )

M. Pluska ( Institute of Electron Technology (Poland) )

J. Ratajczak ( Institute of Electron Technology (Poland) )

P. Perlin ( High Pressure Research Ctr., Unipress (Poland) and TopGaN, Ltd. (Poland) )

9 more

Publication title:

Novel in-plane semiconductor lasers VI : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6485

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465986 [0819465984]

Language:

English

Call no.:

P63600/6485

Type:

Conference Proceedings