Tunable broad-area InGaN laser diodes in external cavity
- Author(s):
K. Komorowska ( Institute of High Pressure Physics, Unipress (Poland) ) P. Wisniewski ( Institute of High Pressure Physics, Unipress (Poland) ) R. Czernecki ( TopGaN, Ltd. (Poland) ) P. Prystawko ( Institute of High Pressure Physics, Unipress (Poland) ) M. Leszczynski ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN, Ltd. (Poland) ) T. Suski ( Institute of High Pressure Physics, Unipress (Poland) ) I. Grzegory ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN, Ltd. (Poland) ) S. Porowski ( Institute of High Pressure Physics, Unipress (Poland) ) S. Grzanka ( TopGaN, Ltd. (Poland) ) M. Maszkowicz ( Warsaw Univ. of Technology (Poland) ) P. Perlin ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN, Ltd. (Poland) ) - Publication title:
- Novel in-plane semiconductor lasers VI : 22-25 January 2007, San Jose, California, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 6485
- Pub. Year:
- 2007
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819465986 [0819465984]
- Language:
- English
- Call no.:
- P63600/6485
- Type:
- Conference Proceedings
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