Low-threshold current low-resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Low-threshold current low-resistance 1.3 μm InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Author(s):

H. Yu ( National Cheng Kung Univ. (Taiwan) )

J. Wang ( Chung Yuan Christian Univ. (Taiwan) )

Y. Su ( National Cheng Kung Univ. (Taiwan) )

S. Chang ( National Cheng Kung Univ. (Taiwan) )

H. Kuo ( National Chiao Tung Univ. (Taiwan) )

F. Lai ( National Chiao Tung Univ. (Taiwan) )

Y. H. Chang ( National Chiao Tung Univ. (Taiwan) )

H. D. Yang ( Industrial Technology Research Institute (Taiwan) )

3 more

Publication title:

Vertical-cavity surface-emitting lasers XI : 24-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6484

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465979 [0819465976]

Language:

English

Call no.:

P63600/6484

Type:

Conference Proceedings

Details

TDL ID:	ZA00046792
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Vertical-Cavity Surface-Emitting Lasers
Conf. info. (Number):	2007 : 11th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.24-2007.01.25

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