Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications

Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications

Author(s):

A. Ougazzaden ( Georgia Tech, CNRS (France) )

S. Gautier ( Lab. Materiaux Optiques, Photonique et Systemes, CNRS (France) )

T. Aggerstam ( KTH Royal Institute of Technology (Sweden) )

J. Martin ( Lab. Materiaux Optiques, Photonique et Systemes, CNRS (France) )

M. Bouchaour ( Lab. Materiaux Optiques, Photonique et Systemes, CNRS (France) )

T. Baghdadli ( Lab. Materiaux Optiques, Photonique et Systemes, CNRS (France) )

S. O. Saad ( Georgia Tech, CNRS (France) )

S. Lourdudoss ( KTH Royal Institute of Technology (Sweden) )

N. Maloufi ( Lab. d'Etude des Textures et Application aux Materiaux, CNRS (France) )

Z. Djebbour ( Lab. de Genie Electrique de Paris, Univ. of Paris VI and XI (France) )

F. Jomard ( Lab. de Physique des Solides et de Cristallogenese, CNRS, Univ. de Versailles-Saint-Quentin 1 (France) )

6 more

Publication title:

Quantum sensing and nanophotonic devices IV : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6479

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465924 [0819465925]

Language:

English

Call no.:

P63600/6479

Type:

Conference Proceedings

Details

TDL ID:	ZA00046787
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Quantum Sensing and Nanophotonic Devices
Conf. info. (Number):	2007 : 4th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.25

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