Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n+pn and p+np designs

Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n+pn and p+np designs

Author(s):

L. W. Snyman ( Tshwane Univ. of Technology (South Africa) )
M. du Plessis ( Univ. of Pretoria (South Africa) )
H. Aharoni ( Univ. of Pretoria (South Africa) )

Publication title:

Silicon photonics II : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6477

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465900 [0819465909]

Language:

English

Call no.:

P63600/6477

Type:

Conference Proceedings

Details

TDL ID:	ZA00046785
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Silicon Photonics
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.25

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