Blank Cover Image

Charge trapping on defects in AlGaN/GaN field effect transistors

Author(s):
Publication title:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6473
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
Language:
English
Call no.:
P63600/6473
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities

O. Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, R. J. Molnar

SPIE - The International Society of Optical Engineering
7 Conference Proceedings AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Yoshida, S., Ishii, H., Li, J.

Trans Tech Publications
2 Conference Proceedings Double-Channel AlGaN/GaN Heterostructure Field-Effect Transistor

Gaska, R., Shur, M. S., Yang, J. W., Fjeldly, T. A.

MRS - Materials Research Society
8 Conference Proceedings AlGaN/GaN Hetero Field-Effect Transistor for a Large Current Operation

Yoshida, S., Ishii, H., Li, J.

Trans Tech Publications
3 Conference Proceedings Piezoelectric Effects in AlGaN/GaN Heterostructure Field-Effect Transistors

Yu, E.T., Asbech, P.M., Lau, s.S., Sullivan, G.J.

Electrochemical Society
9 Conference Proceedings *Pizoelectric effects in AlGaN/GaN-based heterostructure field effect transistors

Shur, M.S., Bykhorski, A.D., Gaska, R.

Electrochemical Society
4 Conference Proceedings Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors

Ruden, P. P., Albrecht, J. D., Sutandi, A., Binari, S. C., Ikossi-Anastasiou, K., Ancona, M. G., Henry, R. L., Koleske, …

MRS - Materials Research Society
10 Conference Proceedings Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors

R. J. Trew, Y. Liu, W. Kuang, G. L. Bilbro

Society of Photo-optical Instrumentation Engineers
5 Conference Proceedings Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

M. Shimizu, M. Inada, S. Yagi, A. Nakajima, H. Okumura

Trans Tech Publications
11 Conference Proceedings New materilas-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors

Albrecht, J. D., Ruden, P. P., Ancona, M. G.

MRS-Materials Research Society
6 Conference Proceedings Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors

Shur, M., Khan, M.A.

Electrochemical Society
12 Conference Proceedings DC and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field-Effect Transistors on SiC Substrates

Chen, Q., Yang, J. W., Khan, M. A., Ping, A. T., Adesida, I.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12