Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Comparison of optical properties of InGaN/GaN/AlGaN laser structures grown by MOVPE and MBE

Author(s):

T. Swietlik ( Institute of High Pressure Physics, Unipress (Poland) )

C. Skierbiszewski ( Institute of High Pressure Physics, Unipress (Poland) )

R. Czernecki ( TopGaN Ltd. (Poland) )

G. Franssen ( Institute of High Pressure Physics, Unipress (Poland) )

P. Wisniewski ( Institute of High Pressure Physics, Unipress (Poland) )

M. Leszczynski ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN Ltd. (Poland) )

I. Grzegory ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN Ltd. (Poland) )

P. Mensz ( Institute of High Pressure Physics, Unipress (Poland) )

T. Suski ( Institute of High Pressure Physics, Unipress (Poland) )

P. Perlin ( Institute of High Pressure Physics, Unipress (Poland) and TopGaN Ltd. (Poland) )

5 more

Publication title:

Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6473

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465863 [0819465860]

Language:

English

Call no.:

P63600/6473

Type:

Conference Proceedings

Details

TDL ID:	ZA00046781
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Gallium Nitride Materials and Devices
Conf. info. (Number):	2007 : 2nd
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.25

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