AlGaN/GaN field-plate FETs for microwave power applications

Author(s):

H. Miyamoto ( R&D Association for Future Electron Devices (Japan) )

Y. Ando ( R&D Association for Future Electron Devices (Japan) )

Y. Okamoto ( R&D Association for Future Electron Devices (Japan) )

T. Nakayama ( R&D Association for Future Electron Devices (Japan) )

A. Wakejima ( R&D Association for Future Electron Devices (Japan) )

T. Inoue ( R&D Association for Future Electron Devices (Japan) )

Y. Murase ( R&D Association for Future Electron Devices (Japan) )

K. Ota ( R&D Association for Future Electron Devices (Japan) )

K. Yamanoguchi ( R&D Association for Future Electron Devices (Japan) )

N. Kuroda ( R&D Association for Future Electron Devices (Japan) )

M. Tanomura ( R&D Association for Future Electron Devices (Japan) )

K. Matsunaga ( R&D Association for Future Electron Devices (Japan) )

7 more

Publication title:

Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6473

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465863 [0819465860]

Language:

English

Call no.:

P63600/6473

Type:

Conference Proceedings