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Growth and polarity control of GaN and AlN on carbon-face SiC by metalorganic vapor phase epitaxy

Author(s):
Y. Fu ( Virginia Commonwealth Univ. (USA) )
Q. Fan ( Virginia Commonwealth Univ. (USA) )
S. Chevtchenko ( Virginia Commonwealth Univ. (USA) )
U. Ozgur ( Virginia Commonwealth Univ. (USA) )
H. Morkoc ( Virginia Commonwealth Univ. (USA) )
Y. Ke ( Univ. of Pittsburgh (USA) )
R. Devaty ( Univ. of Pittsburgh (USA) )
W. J. Choyke ( Univ. of Pittsburgh (USA) )
C. K. Inoki ( SUNY/Univ. at Albany (USA) )
T. S. Kuan ( SUNY/Univ. at Albany (USA) )
5 more
Publication title:
Gallium nitride materials and devices II : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6473
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465863 [0819465860]
Language:
English
Call no.:
P63600/6473
Type:
Conference Proceedings

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