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Study on metal/p-GaN contacts on p-i-n GaN-based UV detectors

Author(s):
  • X. Li ( Shanghai Institute of Technical Physics (China) )
  • J. Chen ( Shanghai Institute of Technical Physics (China) )
  • J. Xu ( Shanghai Institute of Technical Physics (China) )
  • H. Gong ( Shanghai Institute of Technical Physics (China) )
  • J. Fang ( Shanghai Institute of Technical Physics (China) )
Publication title:
Ultrafast phenomena in semiconductors and nanostructure materials XI and semiconductor photodetectors IV : 22-24 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6471
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465849 [0819465844]
Language:
English
Call no.:
P63600/6471
Type:
Conference Proceedings

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