Fabrication of back-gated SWNT field-effect transistor by laser chemical vapor deposition

Fabrication of back-gated SWNT field-effect transistor by laser chemical vapor deposition

Author(s):

J. Shi ( Univ. of Nebraska/Lincoln (USA) )
Y. S. Zhou ( Univ. of Nebraska/Lincoln (USA) )
Y. F. Lu ( Univ. of Nebraska/Lincoln (USA) )
Y. S. Lin ( Univ. of Nebraska/Lincoln (USA) )
S. H. Liou ( Univ. of Nebraska/Lincoln (USA) )

Publication title:

Laser-based micro-and nanopackaging and assembly : 22-24 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6459

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465726 [0819465720]

Language:

English

Call no.:

P63600/6459

Type:

Conference Proceedings

Details

TDL ID:	ZA00046767
Series ID:	PA00000029
Conf. info. (Name):	SPIE LASE : Laser-based Micro- and Nanopackaging and Assembly
Conf. info. (Number):	2007
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.24

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