808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation

808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation

Author(s):

O. B. Jensen ( Riso National Lab. (Denmark) )

A. Klehr ( Ferdinand-Braun-Institut fur Hochstfrequenztechnik (Germany) )

F. Dittmar ( Ferdinand-Braun-Institut fur Hochstfrequenztechnik (Germany) )

B. Sumpf ( Ferdinand-Braun-Institut fur Hochstfrequenztechnik (Germany) )

G. Erbert ( Ferdinand-Braun-Institut fur Hochstfrequenztechnik (Germany) )

P. E. Andersen ( Riso National Lab. (Denmark) )

P. M. Petersen ( Riso National Lab. (Denmark) )

2 more

Publication title:

High-power diode laser technology and applications V : 22-24 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6456

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465696 [0819465690]

Language:

English

Call no.:

P63600/6456

Type:

Conference Proceedings

Details

TDL ID:	ZA00046764
Series ID:	PA00000029
Conf. info. (Name):	SPIE LASE : High-Power Diode Laser Technology and Applications
Conf. info. (Number):	2007 : 5th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.22-2007.01.24

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