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Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

Author(s):
Publication title:
Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
994
Pub. Year:
2007
Page(from):
297
Page(to):
306
Pages:
10
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558999541 [155899954X]
Language:
English
Call no.:
M23500/994
Type:
Conference Proceedings

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