Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

Author(s):

Publication title:

Semiconductor defect engineering--materials, synthetic structures and devices II : symposium held April 9-13, 2007, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

994

Pub. Year:

2007

Page(from):

205

Page(to):

210

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558999541 [155899954X]

Language:

English

Call no.:

M23500/994

Type:

Conference Proceedings

Details

TDL ID:	ZA00046631
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium F
Conf. info. (Number):	2007
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2007.04.09-2007.04.13

Similar Items:

1 Conference Proceedings Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts C.D. Tan, C. Chua, D. Chi Electrochemical Society	7 Conference Proceedings High barrier height n-GaN schottky diodes with a barrier height of 1.3eV by using sputtered copper metal Lai, W. C., Yokoyama, M., Chang, C. Y., Guo, J. D., Tsang, J. S., Chan, S. H., Sze, S. M. MRS-Materials Research Society
2 Conference Proceedings STRUCTURAL CHARACTERIZATION AND SCHOTTKY BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NiSi2 ON Si Hunt, B.D., Schowalter, L.J., Lewis, N., Hall, E.L., Hauenstein, R.J., Schlesinger, T.E., McGill, T.C., Okamoto,Masako, … Materials Research Society	8 Conference Proceedings Effect of Ge-Rich Si1-zGez Segregation on the Morphological Stability of NiSi1-uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer Yao, H.B., Chi, D.Z., Tripathy, S., Chow, S.Y., Wang, W.D., Chua, S.J., Sun, H.P., Pan, X.Q. Materials Research Society
3 Conference Proceedings Schottky-Barrier Height Tuning Using Dopant Segregation in Schottky-Barrier MOSFETs on Fully-Depleted SOI Joachim Knoch, Min Zhang, Qing-Tai Zhao, Siegfried Mantl Materials Research Society	9 Conference Proceedings Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida Trans Tech Publications
4 Conference Proceedings Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance W. Lu, K.L. Pey, N. Singh, K.C. Leong, Q. Liu, C.L. Gan, G.Q. Lo, D.-L. Kwong, C.S. Tan Materials Research Society	10 Conference Proceedings Investigation of Platinum Silicide Schottky Barrier Height Modulation using a Dopant Segregation Approach Nicolas Breil, Aomar Halimaoui, Emmanuel Dubois, Evelyne Lampin, Guilhem Larrieu, Ludovic Godet, George Papasouliotis, … Materials Research Society
5 Conference Proceedings A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode S.S. Kyoung, E.S. Jung, T.Y. Kang, C.H. Yang, M.Y. Sung Trans Tech Publications	11 Conference Proceedings Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates L. Hutin, C. Le Royer, C. Tabone, V. Carron, V. Delaye Electrochemical Society
6 Conference Proceedings Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging H.R. Rossmann, U. Gysin, A. Bubendorf, T. Glatzel, S.A. Reshanov Trans Tech Publications	12 Conference Proceedings Formation and Morphology Evolution of Nickel Germanides on Ge (100) Under Rapid Thermal Annealing Lee, K.Y., Liew, S.L., Chua, S.J., Chi, D.Z., Sun, H.P., Pan, X.Q. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12