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Interaction Between Low Temperatures Spacers and Source Drain Extensions and Pockets for Both NMOS and PMOS of the 65 nm Node Technology

Author(s):
Nathalie Cagnat
Cyrille Laviron
Daniel Mathiot
Pierre Morin
Frederic Salvetti
Davy Villanueva
Marc Juhel
Marco Hopstaken
Francois Wacquant
4 more
Publication title:
Doping engineering for device fabrication : symposium held April 18-19, 2006, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
912
Pub. Year:
2006
Page(from):
71
Page(to):
76
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998681 [1558998683]
Language:
English
Call no.:
M23500/912
Type:
Conference Proceedings

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