Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes | 東京工業大学附属図書館文献データベース

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Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes

Author(s):

Francesco La Via

Giuseppa Galvagno

Andrea Firrincieli

Salvatore Di Franco

Andrea Severino

Giuseppe Pistone

Giuseppe Abbondanza

Ferdinando Portuese

Publication title:

Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

911

Pub. Year:

2006

Page(from):

443

Page(to):

448

Pages:

6

Pub. info.:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998674 [1558998675]

Language:

English

Call no.:

M23500/911

Type:

Conference Proceedings

Details

TDL ID:	ZA00046615
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting : Symposium B
Conf. info. (Number):	2006
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2006.04.18-2006.04.20

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