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Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

Author(s):
Publication title:
Silicon carbide 2006--materials, processing and devices : symposium held April 18-20, 2006, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
911
Pub. Year:
2006
Page(from):
101
Page(to):
106
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998674 [1558998675]
Language:
English
Call no.:
M23500/911
Type:
Conference Proceedings

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