Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

Evaluation of Termination Techniques for 4H-SiC Pin Diodes and Trench JFETs

Author(s):

A. Mihaila

Publication title:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Title of ser.:

Materials science forum

Ser. no.:

556-557

Pub. Year:

2007

Page(from):

925

Page(to):

928

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046610
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Newcastle upon Tyne, UK
Conf. info. (Date):	2006.09.00

Similar Items:

1 Conference Proceedings Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs Rashid, S.J., Mihaila, A., Udrea, F., Malhan, R.K., Amaratunga, G. Trans Tech Publications	7 Conference Proceedings Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches Mihaila, A., Udrea, F., Azar, R., Brezeanu, G., Amaratunga, G. Trans Tech Publications
2 Conference Proceedings Analysis of Novel Packaging Techniques for High Power Electronics in SiC S.J. Rashid, C.M. Johnson, F. Udrea, A. Mihaila, G. Amaratunga, R.K. Malhan Trans Tech Publications	8 Conference Proceedings Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition Chen, Yi, Kimoto, T., Takeuchi, Y., Malhan, R.K., Matsunami, H. Trans Tech Publications
3 Conference Proceedings Switching Performance of Epitaxially Grown Normally-Off 4H-SiC JFET R.K. Malhan, S.J. Rashid, M. Kataoka, Y. Takeuchi, N. Sugiyama Trans Tech Publications	9 Conference Proceedings An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors Brezeanu, G., Badila, M., Godignon, P., Millan, J., Udrea, F., Mihaila, A., Amaratunga, G. Trans Tech Publications
4 Conference Proceedings Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region N. Sugiyama, Y. Takeuchi, M. Kataoka, A. Schöner, R.K. Malhan Trans Tech Publications	10 Conference Proceedings An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV Detectors Brezeanu, G., Badila, M., Godignon, P., Millan, J., Udrea, F., Mihaila, A., Amaratunga, G. Trans Tech Publications
5 Conference Proceedings High Temperature Direct Double Side Cooled Inverter Module for Hybrid Electric Vehicle Application C. Buttay, C.M. Johnson, J. Rashid, F. Udrea, G. Amaratunga, P. Tappin, N.G. Wright, P. Ireland, T. Yamamoto, Y. … Trans Tech Publications	11 Conference Proceedings SiC Migration Enhanced Embedded Epitaxiat (ME3) Growth Technology Takeuchi, Y., Kataoka, M., Kimoto, T., Matsunami, H., Malhan, R.K. Trans Tech Publications
6 Conference Proceedings Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power Switches Mihaila, A., Udrea, F., Azar, R., Brezeanu, G., Amaratunga, G. Trans Tech Publications	12 Conference Proceedings SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices Mihaila, A., Udrea, F., Brezeanu, G., Azar, R., Amaratunga, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12