Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

Reduction of Traps and Improvement of Carrier Lifetime in SiC Epilayer by Ion Implantation

Author(s):

Publication title:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Title of ser.:

Materials science forum

Ser. no.:

556-557

Pub. Year:

2007

Page(from):

603

Page(to):

606

Pages:

4

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046610
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Newcastle upon Tyne, UK
Conf. info. (Date):	2006.09.00

Similar Items:

1 Conference Proceedings Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process H. Tsuchida, I. Kamata, M. Nagano, L. Storasta, T. Miyanagi Trans Tech Publications	7 Conference Proceedings Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC Storasta, L., Kamata, I., Nakamura, T., Tsuchida, H. Trans Tech Publications
2 Conference Proceedings Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers L. Storasta, T. Miyazawa, H. Tsuchida Trans Tech Publications	8 Conference Proceedings Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity M. Ito, L. Storasta, H. Tsuchida Trans Tech Publications
3 Conference Proceedings Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers T. Miyazawa, M. Ito, H. Tsuchida Trans Tech Publications	9 Conference Proceedings Nitrogen Delta Doping in 4H-SiC Epilayers Henry, A., Storasta, L., Janzen, E. Trans Tech Publications
4 Conference Proceedings V and Ti Doping in 4H-SiC Epitaxy for Reduction of Carrier Lifetimes T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications	10 Conference Proceedings Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Huh, S.W., Sumakeris, J.J., Polyakov, A.Y., Skowronski, M., Klein, P.B., Shanabrook, B.V., O'Loughlin, M.J. Trans Tech Publications
5 Conference Proceedings Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers Tawara, T., Tsuchida, H., Izumi, S., Kamata, I., Izumi, K. Trans Tech Publications	11 Conference Proceedings Carrier Lifetime Control of 4H-SiC Epitaxial Layers by Boron Doping T. Miyazawa, T. Tawara, H. Tsuchida Trans Tech Publications
6 Conference Proceedings Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient M. Ito, H. Tsuchida, I. Kamata, L. Storasta Trans Tech Publications	12 Conference Proceedings CARRIER LIFETIME REDUCTION BY ION IMPLANTATION INTO SILICON Mogro-Campero, A., Love, R. P. North-Holland

1

2

3

4

5

6

7

8

9

10

11

12