Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Author(s):

Publication title:

Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006

Title of ser.:

Materials science forum

Ser. no.:

556-557

Pub. Year:

2007

Page(from):

555

Page(to):

560

Pages:

6

Pub. info.:

Stafa-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878494422 [0878494421]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00046610
Series ID:	PA00000012
Conf. info. (Name):	European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	6th
Conf. info. (Venue):	Newcastle upon Tyne, UK
Conf. info. (Date):	2006.09.00

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