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Characteristics of front-illuminated visible-blind UV photodetector based on GaN p-i-n photodiodes with high quantum efficiency [6149-43]

Author(s):
  • You, D. ( Shanghai Institute of Technical Physics, CAS (China) )
  • Tang, Y. ( Shanghai Institute of Technical Physics, CAS (China) )
  • Xu, J. ( Shanghai Institute of Technical Physics, CAS (China) )
  • Gong, H. ( Shanghai Institute of Technical Physics, CAS (China) )
Publication title:
2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6149
Pub. Year:
2006
Page(from):
614917
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819461889 [0819461881]
Language:
English
Call no.:
P63600/6149
Type:
Conference Proceedings

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